| 摘要 |
PURPOSE: A method for forming a landing plug of a semiconductor device is provided to improve yield and reliability by previously preventing short due to a tunnel between the landing plug and a gate. CONSTITUTION: A gate structure(41) is formed on a silicon substrate(31). A nitride layer(43) as a spacer and an interlayer dielectric(45) are sequentially formed on the resultant structure. A landing plug contact hole(47) is formed to expose the substrate by selectively removing the interlayer dielectric and the nitride layer. By cleaning the resultant structure, a tunnel is formed at moat portion of the landing plug contact hole. A silicon nitride layer(49a) is formed at inner walls of the contact hole and the moat portion. Then, a landing plug is formed in the landing plug contact hole.
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