METHOD FOR FORMING LANDING PLUG CONTACT OF SEMICONDUCTOR DEVICE USING OUT PHASE PULSE MODULATION IN MAGNETIZED INDUCTIVELY COUPLED PLASMA ETCHING EQUIPMENT

摘要

PURPOSE: A method for forming a landing plug contact of a semiconductor device is provided to increase contact region and to prevent fail of SAC by using out phase pulse modulation technique in MICP(Magnetized Inductively Coupled Plasma) etching equipment. CONSTITUTION: A semiconductor substrate(21) having a gate(25) is prepared. A nitride layer(26), an interlayer dielectric(27) and a photoresist pattern(28) for defining a contact region are sequentially formed on the resultant structure. The interlayer dielectric is firstly etched to obtain vertical profile by out phase pulse modulation technique after the resultant structure is loaded in MICP etching equipment. The interlayer dielectric is secondly etched to expose the nitride layer by source power pulse modulation technique. The remaining interlayer dielectric is thirdly etched to form a landing plug contact(29) by bias power pulse modulation technique.