METHOD FOR FORMING GATE INSULATING LAYER OF SEMICONDUCTOR DEVICE WITH DIFFERENT EFFECTIVE THICKNESS ON CELL AND PERIPHERAL REGION

摘要

PURPOSE: A method for forming a gate insulating layer of a semiconductor device is provided to easily obtain the gate insulating layer having different effective thickness by forming an oxide layer with thick effective thickness on a cell region and by forming an NO(Nitride/Oxide) layer with thick physical thickness on a peripheral region. CONSTITUTION: A nitride layer(13) is formed on a silicon substrate(11) defined with a cell region(X) and a peripheral region(Y). A photoresist pattern is formed on the nitride layer to expose the cell region. The exposed nitride layer of the cell region is removed. The photoresist pattern is removed. By oxidizing the resultant structure, an oxide layer(15) is formed on the cell region and an NO layer(16) is formed on the peripheral region.