HIGH VOLTAGE TRANSISTOR PROVIDED WITH BENDED CHANNEL FOR INCREASING CHANNEL PUNCH IMMUNITY AND EFFECTIVE CHANNEL LENGTH AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A high voltage transistor and a method for manufacturing the same are provided to increase channel punch immunity by forming a bended channel for increasing effective channel length using LOCOS(LOCal Oxidation of Silicon). CONSTITUTION: A pad oxide layer and a LOCOS nitride layer are sequentially formed on a silicon substrate(100). A field oxide layer is then grown by using LOCOS processing. The field oxide layer is then removed, thereby forming a bended channel. A polysilicon layer is deposited and planarized by CMP, thereby forming a high voltage gate(108). The LOCOS nitride layer is removed. An DDD(Double Diffused Drain) structure(118) is formed by implanting dopants and annealing.