METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO PREVENT HUMP USING MINI-LOCOS PROCESSING

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent a hump and INWE(Inverse Narrow Width Effect) by rounding trench top corner using mini-LOCOS processing. CONSTITUTION: A silicon substrate(21) of an isolation region is exposed by using a pad oxide pattern(21) and a pad nitride pattern(23). A sacrificial oxide layer is formed at the exposed substrate by using mini-LOCOS processing. The sacrificial oxide layer is then removed. At this time, the edge portion of the substrate is rounded. Then, a trench is formed in the substrate.