发明名称 |
A SILICON SINGLE CRYSTAL WAFER, AN EPITAXIAL WAFER AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL |
摘要 |
<p>In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1x10<7> numbers/cm<3> or more and/or a wafer lifetime of 30 mu sec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer. <IMAGE></p> |
申请公布号 |
EP1502972(A1) |
申请公布日期 |
2005.02.02 |
申请号 |
EP20030728034 |
申请日期 |
2003.05.07 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
SAKURADA, MASAHIRO,;MITAMURA, NOBUAKI,;FUSEGAWA, IZUMI,;OHTA, TOMOHIKO, |
分类号 |
C30B15/20;C30B15/00;C30B15/14;C30B29/06;H01L21/322;(IPC1-7):C30B29/06 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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