METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXIAL GROWTH

摘要

PURPOSE: A method for forming a gate of a semiconductor device is provided to improve stability of a co-salicide by using an SEG(Selective Epitaxial Growth) process. CONSTITUTION: A tunnel oxide layer(43), a gate(45) and a hard mask(47) are sequentially formed on a silicon substrate(41). A dual spacer(49,51) is formed at both sidewalls of the gate and the hard mask. A core oxide layer is formed on the resultant structure. A contact hole is formed to expose the substrate by selectively removing the core oxide layer and the tunnel oxide layer using a photoresist pattern as a mask. The photoresist pattern is removed. An SEG is formed on the hard mask including the contact hole. A control gate(59a) is then formed by selectively etching the SEG.