METHOD FOR MANUFACTURING TRANSISTOR WITH UNIFORM SILICIDE LAYER

摘要

PURPOSE: A method for manufacturing a transistor is provided to improve uniformity of a silicide layer and to enhance short channel margin by implanting nitrogen ions before depositing a cobalt film. CONSTITUTION: Nitrogen ions are implanted into a silicon substrate(100) having a junction region(180), a gate(130) and a desired lower structure. Then, a cobalt film is deposited on the resultant structure. A first annealing process is carried out. A cleaning process is performed so as to remove the non-reacted cobalt residues. A second annealing process is then performed.