发明名称 EMITTER SWITCHED THYRISTOR USING PROTECTION CIRCUIT TO IMPROVE SHORT-CIRCUIT WITHSTANDING CAPABILITY OF EST WITHOUT BEING COMPLICATED
摘要 PURPOSE: An emitter switched thyristor having a protection circuit is provided to improve the short-circuit withstanding capability of an EST(Emitter Switched Thyristor). CONSTITUTION: A protection circuit(200) prevents an emitter switched thyristor(100) from being broken due to a high voltage by dropping a gate voltage after detecting a voltage of a floating emitter. A transistor drops a voltage of a node A in case the voltage of the floating emitter increases more than a threshold voltage. A reset diode(202) drops a voltage of a node B in case the voltage of the gate electrode terminal(110) is zero. A resistance device(203) is connected between the gate electrode terminal of the emitter switched thyristor and a second gate electrode(110B).
申请公布号 KR20050012593(A) 申请公布日期 2005.02.02
申请号 KR20030051594 申请日期 2003.07.25
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 CHOI, YEARN IK;HA, MIN WOO;HAN, MIN KOO;JEON, BYUNG CHUL;JI, IN HWAN
分类号 H01L29/74;(IPC1-7):H01L29/74 主分类号 H01L29/74
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