METHOD FOR FORMING VIA HOLE BY DAMASCENE PROCESSING USING SYNCHROTRON RADIATION

摘要

PURPOSE: A method for forming a via hole is provided to simplify process without using a photoresist layer and to improve profile by exposing an interlayer dielectric using synchrotron radiation and performing simultaneously damascene processing. CONSTITUTION: A dual interlayer dielectric(24) including an inorganic SOG(Spin On Glass)(22) and an organic SOG(23) is formed on a substrate(21). A trench is formed by exposing the inorganic SOG using first synchrotron radiation and directly etching using a silicon stencil mask. A via hole(26) is then formed by exposing the organic SOG using second synchrotron radiation and directly etching using a via hole mask(28).