CMP METHOD OF TUNGSTEN FILM WITH IMPROVED UNIFORMITY BY APPLYING POTENTIAL

摘要

PURPOSE: A CMP(Chemical Mechanical Polishing) method of a tungsten film is provided to improve thickness uniformity of a wafer by applying potential in the CMP processing. CONSTITUTION: A wafer(W) having a tungsten film is loaded on a conductor(1). Slurry(2) is provided between the wafer and the conductor. The surface of the tungsten film is changed to stable WO-4 phase by applying potential to the wafer and the conductor. Then, the WO-4 phase is polished by using a pad.