METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO REDUCE THERMAL BUDGET OF INTERLAYER DIELECTRIC USING BPSG LAYER AS PASSIVATION BARRIER LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce effectively thermal budget of an interlayer dielectric by depositing a BPSG(Boron Phosphorous Silicate Glass) layer as a passivation barrier layer on an oxide layer. CONSTITUTION: A transistor including a gate(5) is formed on a silicon substrate(1). An oxide layer(7) is formed on the gate and the silicon substrate by HDPCVD(High Density Plasma Chemical Vapor Deposition). A BPSG layer(9) as a passivation barrier layer is then formed on the oxide layer. The passivation barrier layer is annealed.