| 摘要 |
The deposition of dielectric films by plasma assisted chemical vapor phase deposition involves the exposure, under vacuum, of a substrate (15) to a flux of particles generated by a plasma that reacts to form a passivation layer on the substrate. The deposition of dielectric films by plasma assisted chemical vapor phase deposition involves the exposure, under vacuum, of a substrate (15) to a flux of particles generated by a plasma that reacts to form a passivation layer on the substrate. A selective trap (17) is interposed between the plasma and the substrate, that reduces the flux of particles towards the substrate whilst conserving a neutral flux of particles. The method is carried out in the following two stages: (a) an initial stage of soft deposition, during which the selective trap effectively reduces the flux of charged particles; (b) a following stage of rapid deposition, during which the effect of the selective trap is at least partially inhibited. An independent claim is also included for a device for the deposition of dielectric films by plasma assisted chemical vapor phase deposition. |
