METHOD FOR MANUFACTURING TRANSISTOR WITH THIN AND UNIFORM SILICIDE LAYER

摘要

PURPOSE: A method for manufacturing a transistor is provided to obtain a thin and uniform silicide layer and a shallow junction by forming locally a silicide layer on a selectively grown silicon layer using implantation of nitrogen ions. CONSTITUTION: A silicon layer(190) is selectively grown on a gate(130) and a junction region(180) of a silicon substrate(100). Then, nitrogen ions are implanted into the resultant structure. A cobalt film is deposited on the resultant structure. A first annealing process is carried out. A cleaning process is performed so as to remove the non-reacted cobalt residues. A second annealing process is then performed.