发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 A ZnSe light-emitting device emitting light from an output face comprises an n-type ZnSe substrate including self-active luminescence centers (SA), an active layer formed on the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, and the chromaticity of the white light-emitting device can be easily adjusted. <IMAGE>
申请公布号 KR20050012714(A) 申请公布日期 2005.02.02
申请号 KR20047003533 申请日期 2003.05.19
申请人 发明人
分类号 H01L21/28;H01L33/00;H01L33/04;H01L33/10;H01L33/12;H01L33/28;H01L33/40 主分类号 H01L21/28
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