| 摘要 |
<p>The present invention relates to a novel photoresist that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist. The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 are independently (C1-C6)alkyl, cycloalkyl, cyclohexanone, R5-R9 are independently hydrogen, hydroxyl, (C1-C6)alkyl, C1-C6)aliphatic hydrocarbon containing one or more O atoms, m=1-5, X<-> is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where, R3 is hydrogen or (C1-C6)alkyl, R4 is independently hydrogen, (C1-C6)alkyl, (C1-C6)aliphatic hydrocarbon containing one or more O atoms, Y is a single bond or (C1-C6)alkyl, and n=1-4.</p> |
