| 摘要 |
PURPOSE: A plasma cleaning apparatus is provided to be capable of improving the ionization rate of process gas for obtaining high density plasma by using a pair of plate electrodes, each applied with the first RF(Radio Frequency) signal and the second RF signal having a reverse phase corresponding to the first RF signal. CONSTITUTION: A plasma cleaning apparatus is provided with a gas supply part(10) for supplying process gas, an RF oscillator(60) for supplying the first RF signal and a plasma chamber(20) for transforming the process gas supplied from the gas supply part into plasma by using a pair of plate electrodes and carrying out a cleaning process. The plasma cleaning apparatus further includes a phase inversion circuit(40) for supplying the second RF signal having a reverse phase corresponding to the first RF signal, to one out of the pair of plate electrodes, an impedance matching part(50) for matching the first impedance of the RF oscillator with the second impedance of the plasma chamber, and a vacuum pump(30).
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