| 摘要 |
PURPOSE: A method for forming a gate oxide layer of a complex semiconductor device is provided to be capable of obtaining various operating voltages by forming the gate oxide layer having a different thickness or material according to each region. CONSTITUTION: A flash high voltage transistor region(A), a flash cell region(B), and a logic region(C) are defined by forming an isolation layer and a well at a semiconductor substrate(10). Then, a silicon layer is deposited on the resultant structure. After forming the first resist pattern on the resultant structure, the silicon layer is selectively etched by using the first resist pattern as a mask. After forming the second resist pattern on the resultant structure, N2 ions are selectively implanted into the resultant structure by using the second resist pattern as a mask. A gate oxide layer(14) having a different thickness or material according to the regions, is formed on the resultant structure by carrying out an oxidation. After forming gates at the resultant structure, transistors are formed by carrying out an ion implantation.
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