METHOD FOR FORMING STORAGE NODE ELECTRODE OF SEMICONDUCTOR DEVICE TO SIMPLIFY PROCESS USING SYNCHROTRON RADIATION

摘要

PURPOSE: A method for forming a storage node electrode of a semiconductor device is provided to simplify process without using a photoresist layer and to prevent leaning by exposing a sacrificial oxide layer using synchrotron radiation and simultaneously etching. CONSTITUTION: A semiconductor substrate(11) having a storage node contact plug(13) is prepared. A sacrificial oxide layer made of SOG(Spin On Glass) is formed on the resultant structure. A storage node contact is formed to expose the contact plug by etching the sacrificial oxide layer using synchrotron radiation and using a silicon stencil mask. A storage node electrode(18) is then formed in the storage node contact. The sacrificial oxide layer is then removed.