METHOD OF FORMING CAPACITOR FOR PREVENTING OXIDATION OF TiN LAYER AND RESTRICTING GENERATION OF TiO2 REACTION LAYER

摘要

PURPOSE: A method for forming a capacitor is provided to prevent oxidation of a TiN layer and restrict generation of a TiO2 reaction layer by depositing sequentially an amorphous BSR layer and a crystalline BSR layer before depositing a BST dielectric layer. CONSTITUTION: A semiconductor substrate(1) having a polycrystalline silicon plug is provided. An amorphous BSR layer(7) is formed under room temperature by forming a diffusion barrier on the polycrystalline silicon plug. A crystalline BSR layer(8) is deposited on the amorphous BSR layer. A bottom electrode(9) is formed by crystallizing the resultant structure. A BST dielectric layer(10) and a top electrode(11) are formed sequentially on the bottom electrode.