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发明名称
用于半导体晶圆之立体微影密封及支撑结构
摘要
一支撑结构藉由一立体微影方法而层层相叠地直接施加至一半导体工件或晶圆之第一面且完全包围该周边且朝该周边向内延伸,但外接于其上设置有一适当电路图案之一选定区域,当该工件在相对第二面及该周边附近受到一酸蚀刻处理时,该支撑结构具有适当的高度且为一可抗抵酸蚀刻制程之材料而能有效密封选定区域中之电路图案免受到酸侵蚀。该支撑结构可进一步强化该工件来抵抗挠曲失效。
申请公布号
TW200504796
申请公布日期
2005.02.01
申请号
TW093111856
申请日期
2004.04.28
申请人
3D系统股份有限公司
发明人
史都华 戴维斯;葛瑞特 富莱哈堤
分类号
H01L21/00;H01L21/68
主分类号
H01L21/00
代理机构
代理人
林志刚
主权项
地址
美国
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