发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
Disclosed is a semiconductor device having a double dielectric layer, wherein the double dielectric layer comprises a first dielectric layer having aluminum and a second dielectric layer, of which a dielectric constant is higher than that of the first dielectric layer, stacked on the first dielectric layer. Also disclosed are methods for fabricating the semiconductor device.
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申请公布号 |
US6849505(B2) |
申请公布日期 |
2005.02.01 |
申请号 |
US20020241661 |
申请日期 |
2002.09.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE KEE-JEUNG;OH JONG-HYUK |
分类号 |
H01L29/78;C23C16/30;C23C16/40;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L21/8242;H01L27/108;H01L29/51;(IPC1-7):H01L21/824 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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