发明名称 Substrate for electron source, electron source and image forming apparatus, and manufacturing method thereof
摘要 A substrate for an electron source to be used for forming the electron source, the electron source and an image forming apparatus in which the substrate has been used, and manufacturing method thereof. The substrate to form the electron source in which an electron emission device is disposed includes a substrate containing Na, a first layer with SiO2 as a main component having been formed on the substrate, and a second layer containing electron conductive oxide. The electron source includes the substrate and the electron emission device disposed on the first layer or the second layer. The image forming apparatus includes the electron source and an image forming member to form an image with irradiation of electrons emitted from the electron source. According to a manufacturing method of the substrate for forming the electron source with which the electron emission device is formed, the first layer with SiO2 as its main component, and the second layer containing electron conductive oxide are formed on a substrate containing Na. The manufacturing method of an electron source includes a step in which the first layer with SiO2 as its main component, and the second layer containing electron conductive oxide are formed on a substrate containing Na, and a step of forming an electron emission device on the first layer or on the second layer.
申请公布号 US6849999(B1) 申请公布日期 2005.02.01
申请号 US19990440535 申请日期 1999.11.16
申请人 CANON KABUSHIKI KAISHA 发明人 KOBAYASHI TAMAKI;SHIBATA MASAAKI
分类号 C23C16/40;H01J1/316;H01J9/02;H01J29/04;H01J31/12;(IPC1-7):H01J1/30 主分类号 C23C16/40
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