发明名称 |
Method of fabricating a dual damascene copper wire |
摘要 |
A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insulating layer and the recess first. A continuous and uniform conductive layer is then formed on a surface of the barrier layer. A seed layer is thereafter formed on a surface of the conductive layer. Finally, a metal layer filling up the recess is formed on a surface of the seed layer.
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申请公布号 |
US6849541(B1) |
申请公布日期 |
2005.02.01 |
申请号 |
US20030707517 |
申请日期 |
2003.12.19 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HU SHAO-CHUNG;YANG YU-RU;HUANG CHIEN-CHUNG;HUNG TZUNG-YU |
分类号 |
H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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