发明名称 Method of fabricating a dual damascene copper wire
摘要 A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insulating layer and the recess first. A continuous and uniform conductive layer is then formed on a surface of the barrier layer. A seed layer is thereafter formed on a surface of the conductive layer. Finally, a metal layer filling up the recess is formed on a surface of the seed layer.
申请公布号 US6849541(B1) 申请公布日期 2005.02.01
申请号 US20030707517 申请日期 2003.12.19
申请人 UNITED MICROELECTRONICS CORP. 发明人 HU SHAO-CHUNG;YANG YU-RU;HUANG CHIEN-CHUNG;HUNG TZUNG-YU
分类号 H01L21/768;(IPC1-7):H01L21/476;H01L21/44 主分类号 H01L21/768
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