Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device that forms a connection hole with high electric reliability even when the semiconductor device is designed to be highly integrated. The semiconductor device includes a lower layer wiring and an interlayer insulation film, which is formed on the lower layer wiring and has a connection hole connected with the lower layer wiring. The method includes forming the connection hole by etching the interlayer insulation film. The connection hole is formed by etching part of the lower layer wiring under a first etching condition through physical reaction in at least the vicinity of the lower layer wiring, and by etching part of the interlayer insulation film under a second etching condition that guarantees a selective ratio relative to the lower layer wiring.