发明名称 |
Efficient source diffusion interconnect, MOS transistor and standard cell layout utilizing same |
摘要 |
Standard cell layout efficiency is improved by utilization of a MOS interconnect that minimizes features and geometries requiring compliance with space intensive design rules. Source diffusion regions of MOS structures have a substantially constant width extension extending toward a substrate pick-up diffusion and shares a common silicidation therewith to effect an ohmic contact thereto.
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申请公布号 |
US6849904(B2) |
申请公布日期 |
2005.02.01 |
申请号 |
US20030424319 |
申请日期 |
2003.04.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
TIEN LI-CHUN;SHAW CHING-HAO |
分类号 |
H01L27/02;H01L27/10;H01L27/118;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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