Semiconductor memory device, nonvolatile memory device and magnetic memory device provided with memory elements and interconnections

摘要

A semiconductor memory device, a nonvolatile memory device and a magnetic memory device of high reliability are obtained. A semiconductor device as the magnetic memory device includes TMR cells as memory elements, and a stacked interconnection as an interconnection. The stacked interconnection has a first interconnection made of a barrier metal film and a conductor, and a second interconnection made of another barrier metal film and another conductor and stacked on the first interconnection. The stacked interconnection is arranged opposite to the TMR cells. The stacked interconnection is made thicker in the portions facing the TMR cells than in the portions not facing the TMR cells.