Integrated circuit including an inductor, active layers with isolation dielectrics, and multiple insulation layers

摘要

A semiconductor substrate made of P<-> type or P<--> type silicon having a thickness of approximately 700 mum and a resistivity of 10 Omega.cm to 1000 Omega.cm is provided, a BOX layer with a thickness of 0.2 mum to 10 mum is provided on the semiconductor substrate and a p<-> type SOI layer is provided on this BOX layer. A first insulating film, which makes contact with the BOX layer, is locally buried in this p<-> type SOI layer and a CMOS is formed in a region of the p<-> type SOI layer wherein the above-described first insulating film is not provided. A second insulating film is provided above the first insulating film and over the CMOS, so as to cover the CMOS, and an inductor is provided on the region of this second insulating film corresponding to the first insulating film.