发明名称 Method for manufacturing a semiconductor device that includes planarizing with a grindstone that contains fixed abrasives
摘要 The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstone 10 having a plurality of polygonal segments 20, which comprises abrasive 23 that is bonded together with resin 24 and contains pores 22. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.
申请公布号 US6849542(B2) 申请公布日期 2005.02.01
申请号 US20020272831 申请日期 2002.10.18
申请人 HITACHI, LTD.;NIPPON TOKUSHU KENT CO., LTD. 发明人 KATAGIRI SOICHI;YAMAGUCHI UI;KONDO SEIICHI;YASUI KAN;KAISE MASAHIRO;HONDA MINORU
分类号 B24B57/02;B24D3/32;B24D3/34;B24D7/06;H01L21/304;H01L21/321;(IPC1-7):H01L21/463 主分类号 B24B57/02
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