| 摘要 |
A method, for manufacturing a nonvolatile memory device, includes: forming a first insulating layer above a semiconductor layer; forming a first conductive layer above the first insulating layer: forming a stopper layer above the first conductive layer; patterning the stopper layer and the first conductive layer; forming an ONO film made of a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer above the semiconductor layer and on both side surfaces of the first conductive layer; forming a second conductive layer above the ONO film; applying anisotropic etching to the second conductive layer, and thereby forming a side wall-like control gate aside each of both side surfaces of the first conductive layer, the ONO film being interposed therebetween; forming an impurity layer to be a source region or a drain region inside of the semiconductor layer; forming a second insulating layer over an entire surface; polishing the second insulating layer so as to expose the stopper layer; removing the stopper layer; forming, on the entire surface, a third conductive layer made of a laminate film of a titanium layer and a titanium nitride layer; patterning the third conductive layer and thereby forming a word line; and patterning the first conductive layer and thereby forming a word gate.
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