发明名称 Organic gate insulating film and organic thin film transistor using the same
摘要 Disclosed is an organic gate insulating film and an organic thin film transistor using the same, in which a photo-alignment group is introduced into an organic insulating polymer, so that an organic active film has superior alignment, thereby increasing mobility. Further, the organic active film has a larger grain size, enhancing transistor characteristics.
申请公布号 US6849870(B2) 申请公布日期 2005.02.01
申请号 US20030657191 申请日期 2003.09.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KOO BON WON;SONG IN SUNG;KEE IN SEO;CHOI HWAN JAE;JEONG EUN JEONG;KANG IN NAM
分类号 C08F222/40;G03F7/038;H01L21/31;H01L21/312;H01L29/786;H01L35/24;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L35/24 主分类号 C08F222/40
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