发明名称 |
Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
摘要 |
A semiconductor device comprises a semiconductor substrate; a first insulating film overlying a surface of the semiconductor substrate, an upper surface of the first insulating film being nitrided; a first copper-embedded interconnection embedded in the first insulating film, and which first copper-embedded interconnection contains copper as a main component; a copper nitride film overlying an upper surface of the first copper-embedded interconnection; a cap insulating film overlying an upper surface of the first insulating film and an upper surface of the copper nitride film; and a second insulting film overlying the cap insulating film.
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申请公布号 |
US6849535(B2) |
申请公布日期 |
2005.02.01 |
申请号 |
US20020128265 |
申请日期 |
2002.04.24 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NOGUCHI JUNJI;OHASHI NAOFUMI;TAKEDA KENICHI;SAITO TATSUYUKI;YAMAGUCHI HIZURU;OWADA NOBUO |
分类号 |
H01L21/3205;H01L21/02;H01L21/28;H01L21/321;H01L21/3213;H01L21/70;H01L21/768;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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