| 摘要 |
A method for manufacturing semiconductor device is disclosed which forms a high dielectric layer using atomic layer deposition (ALD). The method for forming a high dielectric layer having a first metal element, a titanium atom and an oxygen atom includes: on a surface of a substrate, adsorbing a first organic source combining a ligand, wherein the ligand includes at least oxygen and C-H combination in the first metal element; forming an atomic layer of the first metal element and the oxygen by inducing reduction reaction of the first organism source and a NH3 gas, which are adsorbed on the surface of the substrate; adsorbing a second organism source combining a ligand, wherein the ligand includes at least oxygen and C-H combination on the titanium; and forming an atomic layer of the titanium and the oxygen by inducing reduction reaction of the second organism source and the NH3 gas, which are adsorbed on the surface of the substrate.
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