发明名称 |
RRAM memory cell electrodes |
摘要 |
A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal layer; and a second oxidation resistive layer. A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell. |
申请公布号 |
US6849891(B1) |
申请公布日期 |
2005.02.01 |
申请号 |
US20030730584 |
申请日期 |
2003.12.08 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG TENG;PAN WEI;ZHANG FENGYAN;ZHUANG WEI-WEI;LI TINGKAI |
分类号 |
H01L21/28;G11C13/00;G11C16/02;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L27/22;H01L29/68;H01L39/00;H01L43/08;H01L45/00;(IPC1-7):H01L29/94 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|