发明名称 Non-volatile semiconductor device having a means to relieve a deficient erasure address
摘要 In a flash memory including memory blocks and a controller for performing erasure and the like with respect to the memory blocks, in the case where a deficient erasure status is output when a certain memory block receives an erasure command, a redundancy judging circuit stores an address at that time and an address inside of a redundant block as a redundant address with respect to the address at that time in a redundant address storage region. Thereafter, when the address is accessed, the address is replaced with the redundant address stored in the redundant address storage region, so that a deficient memory block can be replaced with a redundant block.
申请公布号 US6850436(B2) 申请公布日期 2005.02.01
申请号 US20030611856 申请日期 2003.07.03
申请人 RENESAS TECHNOLOGY CORP. 发明人 OGAWA TOMOYA
分类号 G11C16/06;G11C16/00;G11C29/00;G11C29/04;(IPC1-7):G11C16/00 主分类号 G11C16/06
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