发明名称 |
Semiconductor memory device with reduced current consumption during standby state |
摘要 |
Data indicating whether a short-circuit defect exists in a memory block is programmed a fuse program circuit. In accordance with the fuse program data and a mode instruction signal, the correspondence relationship between a block select signal and a corresponding bit line isolation instruction signal is switched by a circuit that generates the bit line isolation instruction signal in a specific mode. It becomes possible to isolate the memory block in which a leakage current path exists from a corresponding sense amplifier band in a specific operation mode. Current consumption at least at a standby state is reduced.
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申请公布号 |
US6850454(B2) |
申请公布日期 |
2005.02.01 |
申请号 |
US20030626643 |
申请日期 |
2003.07.25 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KUGE SHIGEHIRO;HAMAMOTO TAKESHI |
分类号 |
G11C11/409;G11C7/00;G11C7/12;G11C8/00;G11C11/34;G11C11/401;G11C11/403;G11C11/406;G11C11/4091;G11C11/4094;G11C29/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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