发明名称 |
Fabrication of ultra shallow junctions from a solid source with fluorine implantation |
摘要 |
One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.
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申请公布号 |
US6849528(B2) |
申请公布日期 |
2005.02.01 |
申请号 |
US20010020813 |
申请日期 |
2001.12.12 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAKRAVARTHI SRINIVASAN;CHIDAMBARAM PERIANNAN |
分类号 |
H01L21/225;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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