发明名称 |
Thin gate dielectric for a CMOS transistor and method of fabrication thereof |
摘要 |
A method of making a thin gate dielectric includes implanting a barrier substance into a region of a silicon substrate. A capacitance-increasing material is implanted into the silicon substrate. An outside layer of the silicon substrate is oxidized to form a first silicon oxide layer. The silicon substrate is oxidized between the first silicon oxide layer and the region.
|
申请公布号 |
US6849512(B1) |
申请公布日期 |
2005.02.01 |
申请号 |
US20020283630 |
申请日期 |
2002.10.30 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
LO WAI;KIMBALL JAMES P.;HORNBACK VERNE C. |
分类号 |
H01L21/265;H01L21/28;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|