发明名称 |
Reflection mask for EUV-lithography and method for fabricating the reflection mask |
摘要 |
A reflection mask has a multilayer reflection layer for the reflection of radiated-in radiation by constructive interference of the reflected partial beams and a multilayer layer, whose periodicity effects a destructive interference of the reflected partial beams and which performs the function of an absorber. One of the two multilayer layers is patterned in accordance with a structure to be imaged.
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申请公布号 |
US6849365(B2) |
申请公布日期 |
2005.02.01 |
申请号 |
US20020292866 |
申请日期 |
2002.11.12 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHWARZL SIEGFRIED;WURM STEFAN |
分类号 |
G03F1/14;G03F1/24;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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