发明名称 THIN FILM TRANSISTOR DISPLAY PLATE LOWERING KICK-BACK VOLTAGE WHILE MAXIMIZING APERTURE RATIO
摘要 PURPOSE: A thin film transistor display plate is provided to lower a kick-back voltage by reducing parasitic capacity between gate electrodes and drain electrodes while maximizing an aperture ratio. CONSTITUTION: A plurality of gate lines(121) are formed on an insulation substrate. A gate insulating film is formed on the insulation substrate. A plurality of linear semiconductor layers(151) are formed on the gate insulating film. A plurality of data lines(171) and a plurality of drain electrodes(175) are formed on the semiconductor layers. A passivation layer is formed on the data lines. A plurality of pixel electrodes(190) are formed on the passivation layer, and are electrically connected with the drain electrodes. The pixel electrode is overlapped with the whole width of a previous gate line while not being overlapped with the own gate line.
申请公布号 KR20050011874(A) 申请公布日期 2005.01.31
申请号 KR20030050929 申请日期 2003.07.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, BACK WON
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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