发明名称 |
THIN FILM TRANSISTOR DISPLAY PLATE LOWERING KICK-BACK VOLTAGE WHILE MAXIMIZING APERTURE RATIO |
摘要 |
PURPOSE: A thin film transistor display plate is provided to lower a kick-back voltage by reducing parasitic capacity between gate electrodes and drain electrodes while maximizing an aperture ratio. CONSTITUTION: A plurality of gate lines(121) are formed on an insulation substrate. A gate insulating film is formed on the insulation substrate. A plurality of linear semiconductor layers(151) are formed on the gate insulating film. A plurality of data lines(171) and a plurality of drain electrodes(175) are formed on the semiconductor layers. A passivation layer is formed on the data lines. A plurality of pixel electrodes(190) are formed on the passivation layer, and are electrically connected with the drain electrodes. The pixel electrode is overlapped with the whole width of a previous gate line while not being overlapped with the own gate line.
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申请公布号 |
KR20050011874(A) |
申请公布日期 |
2005.01.31 |
申请号 |
KR20030050929 |
申请日期 |
2003.07.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, BACK WON |
分类号 |
G02F1/136;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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主权项 |
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地址 |
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