发明名称 |
SYNCHRONOUS MEMORY DEVICE CAPABLE OF REMOVING GLITCH OF DATA ALIGN SIGNAL, ESPECIALLY INCLUDING DATA ALIGN SIGNAL RIPPLING PREVENTION UNIT |
摘要 |
PURPOSE: A synchronous memory device capable of removing glitch of a data align signal is provided to align data stably by preventing operation error due to glitch phenomenon. CONSTITUTION: According to the synchronous memory device, a data align signal generation unit(500) generates a rising align signal and a falling align signal synchronized to a rising edge and a falling edge of an inputted data strobe signal. A data align unit(100) align continuously inputted data by synchronizing them to the rising align signal and the falling align signal and then outputs them to a memory core region. And a data align signal rippling prevention unit(600) outputs a control signal controlling the data align signal generation unit to generate the rising align signal and the falling align signal only during a data input period.
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申请公布号 |
KR20050011984(A) |
申请公布日期 |
2005.01.31 |
申请号 |
KR20030051063 |
申请日期 |
2003.07.24 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YOON, YOUNG JIN |
分类号 |
G11C11/40;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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