发明名称 SYNCHRONOUS MEMORY DEVICE CAPABLE OF REMOVING GLITCH OF DATA ALIGN SIGNAL, ESPECIALLY INCLUDING DATA ALIGN SIGNAL RIPPLING PREVENTION UNIT
摘要 PURPOSE: A synchronous memory device capable of removing glitch of a data align signal is provided to align data stably by preventing operation error due to glitch phenomenon. CONSTITUTION: According to the synchronous memory device, a data align signal generation unit(500) generates a rising align signal and a falling align signal synchronized to a rising edge and a falling edge of an inputted data strobe signal. A data align unit(100) align continuously inputted data by synchronizing them to the rising align signal and the falling align signal and then outputs them to a memory core region. And a data align signal rippling prevention unit(600) outputs a control signal controlling the data align signal generation unit to generate the rising align signal and the falling align signal only during a data input period.
申请公布号 KR20050011984(A) 申请公布日期 2005.01.31
申请号 KR20030051063 申请日期 2003.07.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, YOUNG JIN
分类号 G11C11/40;(IPC1-7):G11C11/40 主分类号 G11C11/40
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