METHOD FOR MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REMOVING ADHESION OF POLYSILICON BY USING WET-ETCHING INSTEAD OF REMOVING ONO INSULATING LAYER

摘要

PURPOSE: A manufacturing for manufacturing a non-volatile semiconductor memory device is provided to remove adhesion of a polysilicon by using a wet-etching instead of removing an ONO(Oxide-Nitride-Oxide) insulating layer. CONSTITUTION: A first oxide layer(130), a nitride layer, and a second oxide layer are sequentially formed on a silicon substrate(110) having a device isolation trench formed thereon. A photosensitive film(170) is formed on the second oxide layer. A photosensitive pattern corresponding to an ONO insulating layer pattern is formed by exposing, developing, and etching the photosensitive pattern. The photosensitive pattern is wet-etched. A nitride layer pattern is formed by removing the nitride layer using a wet etching. The second oxide layer pattern is used as an etch stop layer.