METHOD FOR FORMING MICRO-PATTERNS IN SEMICONDUCTOR ELEMENT CAPABLE OF REDUCING CD-SLIMMING DURING SEM OPERATION

摘要

PURPOSE: A method for forming micro-patterns in a semiconductor element is provided to improve device property and reliability by forming accurate photoresist patterns while reducing CD(Critical Dimension)-slimming during an SEM(Scanning Electron Microscope) operation. CONSTITUTION: A layer to be etched(33) is formed on a semiconductor substrate. A photoresist layer is formed on the layer to be etched. A photoresist pattern(35a) is formed by performing exposure/developing process on the photoresist layer. A surface of the photoresist pattern is harden by exposing the surface to plasma in a dry etching apparatus.