METHOD OF CLEANING SEMICONDUCTOR WAFERS AFTER LAPPING

摘要

THERE IS DISCLOSED A METHOD OF CLEANING A SEMICONDUCTOR WAFER AFTER LAPPING IN THE MANUFACTURE THEREOF COMPRISING THE STEPS OF SLICING A MONOCRYSTALLINE INGOT INTO A SEMICONDUCTOR WAFER, AND CHAMFERING, LAPPING, ACID-ETCHING, AND THEN MIRROR-POLISHING THE THUS-OBTAINED SEMICONDUCTOR WAFER. THE SEMICONDUCTOR WAFER IS CLEANED IN A STRONG-ALKALINE AQUEOUS SOLUTION AT A POINT OF TIME AFTER THE LAPPING AND BEFORE THE ACID-ETCHING, SUCH THAT THE SURFACE OF THE SEMICONDUCTOR WAFER IS DISSOLVED IN AN AMOUNT IN THE RANGE OF 4-8 µm. THE CLEANING METHOD PREVENTS GENERATION OF A PROTRUSION ON THE OUTER CIRCUMFERENTIAL END PORTION OF THE WAFER IN THE SUBSEQUENT ACID-ETCHING STEP.FIG. 1