| 摘要 |
The trimmer Hall sensor is used in the field of instrumentation engineering, weak polar magnetometry and microsystems, in contactless automation, instrumentation construction, the power industry, theelectrical industry, in military warfare industry, and others. It eliminates basic deficiencies of the analogous solutions - high offset values in the individual output channels and the essential temperature drifting. The sensor comprises semiconductor wafer (1) of mixed type conductivity, on one of the sides of which two pairs of identical rectangular ohmic contacts are made at equal distances, fitted parallel to their long sides. Contacts of one of the pairs are sectioned into two equal parts (2, 3 and 4, 5), parts (4 and 5) of one of the sectioned contacts are fitted between the non-sectioned rectangular ohmic contacts (6 and 7). On the short sides of contacts (6 and 7), at equal distances from them, one pair each of Hall contacts (8, 9 and 10, 11) are formed. Parts (2, 3 and 4, 5) of the sectioned contacts are connected to the end outputs of two trimmer (12 and 13), the middle outputs of which are connected across load resistors (14 and 15), respectively, to the two outputs of a current source (16). Each of contacts (6 and 7) across two loads resistors (17, 18 and 19, 20) connected in series, respectively, is connected to both outputs of the current source (16). The two equal parts (2, 3, and 4, 5) of each of sectioned ohmic contacts are coupled to the respective input (21 and 22) of the first amplifying unit (23), the output of which is output (24) of the component of the magnetic field (33), orthogonal to the surface of wafer (1). The pair of Hall contacts (8, 9 and 10, 11), fitted on the short sides of the two contacts (6 and 7) are connected to the appropriate input (25 and 26) of a second amplifying unit (27), the output of which is output (28) for one of the parallel to the surface of wafer (1) component of magnetic field (33). The middle output of each of the two trimmers (12 and 13) and the common point of each resistor (17, 18 and 19, 20) connected in series are connected to the appropriate input (29 and 30) of a third amplifying unit (31), the output of which is output (32) for the other component of the magnetic field (33), parallel to the surface of wafer (1). The external magnetic field (33) has an arbitrary direction across the semiconductor wafer (1).
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