METHOD FOR MANUFACTURING SOI TRANSISTOR HAVING VERTICAL DOUBLE CHANNELS AND STRUCTURE THEREOF CAPABLE OF INCREASING CURRENT FLOWING THROUGH THE DOUBLE CHANNEL WITHOUT USING COMPLICATED SOI SUBSTRATE FORMATION

摘要

PURPOSE: A method for manufacturing an SOI(Silicon On Insulator) transistor having vertical double channels and a structure thereof are provided to increase current flowing through the double channel without using a complicated SOI substrate formmation by forming the SOI transistor on a bulk semiconductor substrate. CONSTITUTION: A structure of an SOI transistor includes an active region, a gate insulating film, a gate electrode(118), and source and drain regions(121a). The active region is defined by a device isolation film(112) on a substrate(110) and includes a recess. The gate insulating film is formed on a portion of sidewalls of the recess and a portion of a bottom of the recess. The gate electrode is coupled with the sidewalls in a first direction via the gate isolation film and is formed on the recess to be spaced with a predetermined distance from the sidewalls in a second direction perpendicular to the first direction. The source and drain regions are formed on the sidewalls of the first direction with the gate electrode disposed therebetween.