MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF TO PREVENT RESIDUAL FILM FROM SHORT-CIRCUITING INSULATING BARRIER LAYER BY USING MAGNETO-RESISTIVE ELEMENT

摘要

PURPOSE: A magnetic memory device and a manufacturing method thereof are provided to prevent a residual film of processed material remaining on the side surface of the processed part of the MTJ element in the micro-manufacturing process from short-circuiting the insulating barrier film. CONSTITUTION: A wiring layer is formed on a substrate. The wiring layer includes a lower electrode(28), a magneto-resistive element formed on the lower electrode and configured to include an insulation barrier layer, at least one contact layer stacked on the magneto-resistive element, and an upper wiring connected to the contact layer. A taper angle of a lateral surface of the magneto-resistive element including the insulation barrier layer, relative to a bottom surface of the magneto-resistive element, is about 60 degrees or less. The contact layer and the magneto-resistive element are formed in a self-alignment manner.