METHOD OF FORMING SEMICONDUCTOR DEVICE TO REDUCE LEAKAGE CURRENT, IMPROVE INSULATING CHARACTERISTIC, AND INCREASE OPERATION CURRENT

摘要

PURPOSE: A method of forming a semiconductor device is provided to reduce leakage current and increase operation current by using an insulating layer surrounding an active region. CONSTITUTION: A first insulating layer(13) and a first epitaxial layer(15) are deposited on a semiconductor substrate(11). An isolation layer(17) is formed on an isolation region of the first epitaxial layer. A well is formed by implanting impurity ions into the first epitaxial layer. A gate(23) as a stacked structure of a first gate oxide layer(19) and a gate material layer is formed on the first epitaxial layer. A second gate oxide layer is formed on a surface of the gate material layer. A second epitaxial layer(25) is formed to bury an active region between the isolation layers. A well is formed by implanting impurity ions into the second epitaxial layer. A source/drain junction region(35,37) is formed by implanting source/drain impurity ions into the first and second epitaxial layers.