METHOD OF MANUFACTURING FLASH OR EEPROM CELL WITH ENHANCED FLOATING GATE FOR ACQUIRING EXCELLENT ON/OFF PROPERTIES

摘要

PURPOSE: A method of manufacturing a flash or EEPROM(Electrically Erasable Programmable Read Only Memory) cell is provided to improve on/off properties by arranging a floating gate around a control gate. CONSTITUTION: A control gate oxide layer(102), a control gate electrode(104) and an insulating layer(106) are sequentially formed on a silicon substrate(100). A floating gate oxide layer is formed thereon. A floating gate electrode(108) for surrounding the control gate electrode is formed on the resultant structure by performing predetermined etching processes on a polysilicon layer. A source and drain junction(112) are formed in the substrate to align the gate structure.