CMOS TFT AND DISPLAY DEVICE USING THE SAME FOR ELIMINATING ABSOLUTE VALUE DIFFERENCE BETWEEN THRESHOLD VOLTAGES OF P-TYPE TFT AND N-TYPE TFT BY ADJUSTING SHAPES OF GRAINS INCLUDED IN ACTIVE CHANNEL

摘要

PURPOSE: A CMOS TFT AND a display device using the same for eliminating an absolute value difference between threshold voltages of a P-type TFT and an N-type TFT and increase a degree of current migration by adjusting shapes of grains included in an active channel. CONSTITUTION: A polysilicon grain formed in an active channel of a P-type TFT has an anisotropic grain structure. A polysilicon grain formed in an active channel of an N-type TFT has an isotropic grain structure. A size of the polysilicon grain having the anisotropic grain structure is larger than a size of the polysilicon grain having the isotropic grain structure.